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BUK7L06-34ARC
TrenchPLUS standard level FET
Rev. 03 -- 3 December 2003 Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM technology, featuring very low on-state resistance, integral gate resistor, ESD protection diodes and clamping diodes that are guaranteed to prevent the MOSFET avalanching.
1.2 Features
s ESD and overvoltage protection s Internal gate resistor s Q101 compliant s On-state resistance 5.1 m (typ).
1.3 Applications
s 12 V loads s Motors, lamps and solenoids.
1.4 Quick reference data
s VDSR(CL) = 41 V (typ) s ID 147 A s RDSon = 5.1 m (typ) s Ptot 250 W.
2. Pinning information
Table 1: Pin 1 2 3 mb Pinning - SOT78C, simplified outline and symbol Simplified outline
mb
Description gate (g) drain (d) source (s) mounting base, connected to drain (d)
Symbol
d
g
s
MBL521
123
MBL370
SOT78C (TO-220)
Philips Semiconductors
BUK7L06-34ARC
TrenchPLUS standard level FET
3. Ordering information
Table 2: Ordering information Package Name BUK7L06-34ARC TO-220 Description Version Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads. SOT78C Type number
4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS = 10 V; Figure 2 and 3 Tmb = 100 C; VGS = 10 V; Figure 2 IDM Ptot IDG(CL) IGS(CL) Tstg Tj IDR IDRM EDS(CL)S peak drain current total power dissipation drain-gate clamping current gate-source clamping current storage temperature junction temperature reverse drain current (DC) peak reverse drain current Tmb = 25 C Tmb = 25 C; pulsed; tp 10 s
[2] [3]
Conditions
[1]
Min -55 -55 [1] [1] [2] [3] [2]
Max 34 34 20 147 75 103 590 250 50 10 50 +175 +175 147 75 590 1.0
Unit V V V A A A A W mA mA mA C C A A A J
RGS = 20 k
Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1 tp = 5 ms; = 0.01 continuous tp = 5 ms; = 0.01
Source-drain diode
Avalanche ruggedness non-repetitive drain-source clamped clamped inductive load; ID = 75 A; energy VDS 34 V; VGS = 10 V; starting Tj = 25 C electrostatic discharge voltage; all pins human body model; C = 100 pF; R = 1.5 k human body model; C = 250 pF; R = 1.5 k
[1] [2] [3] Voltage is limited by clamping. Current is limited by power dissipation chip rating. Continuous current is limited by package.
Electrostatic discharge Vesd 8 8 kV kV
9397 750 12162
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 03 -- 3 December 2003
2 of 14
Philips Semiconductors
BUK7L06-34ARC
TrenchPLUS standard level FET
120 Pder (%) 80
03na19
150 ID (A) 100
03nj41
Capped at 75 A due to package 40 50
0 0 50 100 150 200 Tmb (C)
0 0 50 100 150 200 Tmb (C)
P tot P der = ---------------------- x 100% P
tot ( 25 C )
VGS 10 V
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Continuous drain current as a function of mounting base temperature.
103
03nj39
ID (A)
Limit RDSon = VDS / ID
tp = 10 s
102
100 s
Capped at 75 A due to package DC 10
1 ms
10 ms 100 ms
1 10-1 1 10 VDS (V) 102
Tmb = 25 C; IDM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 12162
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 03 -- 3 December 2003
3 of 14
Philips Semiconductors
BUK7L06-34ARC
TrenchPLUS standard level FET
5. Thermal characteristics
Table 4: Symbol Rth(j-a) Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to mounting base Conditions vertical in still air Figure 4 Min Typ 60 0.33 Max 0.60 Unit K/W K/W
5.1 Transient thermal impedance
1 Zth(j-mb) = 0.5 (K/W)
0.2
03nj40
10-1
0.1 0.05 0.02
10-2 P
single shot
=
tp T
tp T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s)
t
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 12162
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 03 -- 3 December 2003
4 of 14
Philips Semiconductors
BUK7L06-34ARC
TrenchPLUS standard level FET
6. Characteristics
Table 5: Characteristics Tj = 25 C unless otherwise specified. Symbol V(BR)DG Parameter drain-gate zener breakdown voltage Conditions ID = 2 mA; VGS = 0 V Tj = 25 C Tj = -55 C VDSR(CL) VGS(th) drain-source clamping voltage (DC) IGS(CL) = -2 mA; ID = 1 A Figure 16 and 17
[1]
Min
Typ
Max
Unit
Static characteristics 34 34 41 45 45 V V V
gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 175 C Tj = 150 C Tj = -55 C 2.2 1.2 1.5 20 3 0.1 5 30 22 3.8 4.2 2 50 250 V V V V A A A V
IDSS
drain-source leakage current
VDS = 16 V; VGS = 0 V Tj = 25 C Tj = 150 C Tj = 175 C
V(BR)GSS IGSS
gate-source breakdown voltage gate-source leakage current
IG = 1 mA; -55 C < Tj < +175 C VGS = 10 V; VDS = 0 V Tj = 25 C Tj = 175 C VGS = 16 V; VDS = 0 V Tj = 175 C
-
5 -
1000 50 150
nA A A
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 30 A; Figure 7 and 8 Tj = 25 C Tj = 175 C VGS = 16 V; ID = 30 A VGS = 10 V; VDS = 27 V; ID = 25 A; Figure 14 VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 5.1 4.0 11 82 15 31 3400 1080 660 6 11.4 5.3 4533 1296 904 m m m nC nC nC pF pF pF
RG Qg(tot) Qgs Qgd Ciss Coss Crss
Internal gate resistor total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance
Dynamic characteristics
9397 750 12162
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 03 -- 3 December 2003
5 of 14
Philips Semiconductors
BUK7L06-34ARC
TrenchPLUS standard level FET
Table 5: Characteristics...continued Tj = 25 C unless otherwise specified. Symbol td(on) tr td(off) tf Ld Parameter turn-on delay time rise time turn-off delay time fall time internal drain inductance measured from drain lead 6 mm from package to center of die measured from contact screw on mounting base to center of die SOT78C Ls internal source inductance measured from source lead to source bond pad IS = 10 A; VGS = 0 V; Figure 15 IS = 20 A; dIS/dt = -100 A/s VGS = -10 V; VDS = 30 V Conditions VDS = 30 V; RL = 1.2 ; VGS = 10 V; RG = 10 Min Typ 27 108 196 167 4.5 Max Unit nS nS nS nS nH
-
3.5
-
nH
-
7.5
-
nH
Source-drain diode VSD trr Qr
[1]
source-drain (diode forward) voltage reverse recovery time recovered charge
-
0.85 62 44
1.2 -
V ns nC
Independent testing of MOSFET and clamping diodes guarantees against avalanche.
9397 750 12162
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 03 -- 3 December 2003
6 of 14
Philips Semiconductors
BUK7L06-34ARC
TrenchPLUS standard level FET
350 ID (A) 280 20 10 9 8 7.5 7 210 6.5 6 5.5 70 5 4.5 4 0 2 4 6 8
03nj36
12 RDSon (m) 9
03nj35
Label is VGS (V)
140
6
0
3 10 VDS (V) 5 10 15 VGS (V) 20
Tj = 25 C; tp = 300 s
Tj = 25 C; ID = 30 A
Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values.
Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values.
14 5 RDSon (m) 10 8 6 7
03nj37
2 a 1.5
03aa27
Label is VGS (V)
1 10 20 0.5
6
2 0 100 200 300 ID (A) 400
0 -60 0 60 120 Tj (C) 180
Tj = 25 C; tp = 300 s
R DSon a = ---------------------------R DSon ( 25 C ) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature.
Fig 7. Drain-source on-state resistance as a function of drain current; typical values.
9397 750 12162
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 03 -- 3 December 2003
7 of 14
Philips Semiconductors
BUK7L06-34ARC
TrenchPLUS standard level FET
5 VGS(th) (V) 4 typ 3 min 2 max
03nh86
10-1 ID (A) 10-2
03nh87
10-3
min
typ
max
10-4
1
10-5
0 -60 0 60 120 Tj (C) 180
10-6 0 2 4 VGS (V) 6
ID = 1 mA; VDS = VGS
Tj = 25 C; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of junction temperature.
Fig 10. Sub-threshold drain current as a function of gate-source voltage.
80 gfs (S) 60
03nj33
6000 C (pF) 4000 Coss
03nj38
Ciss
40
2000 20 Crss 0 0 20 40 60 ID (A) 80 0 10-1 1 10 VDS (V) 102
Tj = 25 C; VDS = 25 V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 12162
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 03 -- 3 December 2003
8 of 14
Philips Semiconductors
BUK7L06-34ARC
TrenchPLUS standard level FET
100 ID (A) 75
03nj34
10 VGS (V) 8
03nj32
6 50 4
VDD = 14 V
VDD = 27 V
25 Tj = 175 C Tj = 25 C 2
0 0 2 4 VGS (V) 6
0 0 25 50 75 QG (nC) 100
VDS = 25 V
Tj = 25 C; ID = 25 A
Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of gate charge; typical values.
100 IS (A) 75
03nj31
50
25
Tj = 175 C Tj = 25 C
0 0.0 0.3 0.6 0.9 VSD (V) 1.2
VGS = 0 V
Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
9397 750 12162
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 03 -- 3 December 2003
9 of 14
Philips Semiconductors
BUK7L06-34ARC
TrenchPLUS standard level FET
42.0 VDSR(CL) (V) 41.5 Tj = 175 C
03nj57
43 VDSR(CL) (V) 42 Tj = 175 C Tj = 25 C Tj = - 55 C
03nj56
Tj = 25 C Tj = -55 C 41
41.0 40
40.5 0 2 4 6 8 ID (A) 10
39 0 1 2 -IGS(CL) (mA) 3
IGD(CL) = -2 mA
ID = 10 A
Fig 16. Drain-source clamping voltage as a function of drain current; typical values.
Fig 17. Drain-source clamping voltage as a function of gate-source clamping current; typical values.
9397 750 12162
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 03 -- 3 December 2003
10 of 14
Philips Semiconductors
BUK7L06-34ARC
TrenchPLUS standard level FET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads SOT78C
E p mounting base
A A1 q
D1 q1
D
q2
L1
Q
L
b1
1
2
3
b c
e e1 H
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.58 4.31 A1 1.33 1.21 b 0.87 0.76 b1 1.33 1.21 c 0.44 0.33 D 15.07 14.80 D1 6.47 6.22 E 10.40 10.00 e 2.64 2.44 e1 5.16 5.00 H 6.03 5.76 L 14.00 13.50 L1 6.10 5.58 p 3.90 3.78 Q 2.72 2.40 q 2.95 2.69 q1 3.80 3.42 q2 12.40 12.00
Notes 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78C REFERENCES IEC JEDEC 3-lead TO-220 JEITA EUROPEAN PROJECTION ISSUE DATE 01-12-11 03-01-21
Fig 18. SOT78C (TO-220).
9397 750 12162 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 03 -- 3 December 2003
11 of 14
Philips Semiconductors
BUK7L06-34ARC
TrenchPLUS standard level FET
8. Revision history
Table 6: Rev Date 03 20031203 Revision history CPCN Description Product data (9397 750 12162)
*
02 01 20030521 20030414 -
Avalanche Ruggedness parameter description in Section 4 changed from: `non-repetitive drain-source avalanche energy' to `non-repetitive drain-source clamp energy'. Typical values of IDSS added to characteristics table, Section 6.
Product data (9397 750 11471)
*
Product data (9397 750 11177)
9397 750 12162
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 03 -- 3 December 2003
12 of 14
Philips Semiconductors
BUK7L06-34ARC
TrenchPLUS standard level FET
9. Data sheet status
Level I II Data sheet status[1] Objective data Preliminary data Product status[2][3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
III
Product data
Production
[1] [2] [3]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
10. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
12. Trademarks
-- TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
11. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors
Contact information
For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.
9397 750 12162
Fax: +31 40 27 24825
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 03 -- 3 December 2003
13 of 14
Philips Semiconductors
BUK7L06-34ARC
TrenchPLUS standard level FET
Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 5.1 6 7 8 9 10 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
(c) Koninklijke Philips Electronics N.V. 2003. Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 3 December 2003 Document order number: 9397 750 12162

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